Role of Nanotechnology in Field Effect Transistors
نویسندگان
چکیده
The Field Effect Transistor using nanotechnology is known as Carbon Nanotube Field Effect Transistors (CNTFET). Which promising nano-scaled devices for implementing high performance very dense and low power circuits. A Carbon Nanotube Field Effect Transistor refers to a FET with a single CNT or an array of CNT's as the channel material instead of bulk silicon in the traditional MOSFET structure. The core of a CNTFET is a carbon nanotube. In this paper, about CNTFETs is informed. The structure, operation and the characteristics of different types of CNTFET's have been discussed. The operation, dc characteristics of CNTFETs have been presented and analysis of the performance of various characteristics.
منابع مشابه
Modeling of Manufacturing of Field-Effect Heterotransistors without P-n-junctions to Optimize Decreasing their Dimensions
It has been recently shown that manufacturing p-n-junctions, field-effect and bipolar transistors, thyristors in a multilayer structure by diffusion or ion implantation with the optimization of dopant and/or radiation defects leads to increase the sharpness of p-n-junctions (both single p-n-junctions and p-n-junctions framework their system). Due to the optimization, one can also obtain increas...
متن کاملThe effect of phonon scattering on the switching response of carbon nanotube field-effect transistors.
The performance of carbon nanotube field-effect transistors is analyzed numerically, using the non-equilibrium Green's function formalism. The effect of electron-phonon scattering on both the DC and switching response of these devices is studied. For the calculation of the switching response, the quasi-static approximation is assumed. The role of the electron-phonon coupling strength and phonon...
متن کاملThe performance of in situ grown Schottky-barrier single wall carbon nanotube field-effect transistors.
Electrical transport measurements were used to study device behavior that results from the interplay of defects and inadvertent contact variance that develops in as-grown semiconducting single wall carbon nanotube devices with nominally identical Au contacts. The transport measurements reveal that as-grown nanotubes contain defects that limit the performance of field-effect transistors with ohm...
متن کاملA Novel Design of Quaternary Inverter Gate Based on GNRFET
This paper presents a novel design of quaternary logic gates using graphene nanoribbon field effect transistors (GNRFETs). GNRFETs are the alternative devices for digital circuit design due to their superior carrier-transport properties and potential for large-scale processing. In addition, Multiple-valued logic (MVL) is a promising alternative to the conventional binary logic design. Sa...
متن کاملMultifunctional CuO nanowire devices: p-type field effect transistors and CO gas sensors.
We report the properties of a field effect transistor (FET) and a gas sensor based on CuO nanowires. CuO nanowire FETs exhibit p-type behavior. Large-scale p-type CuO nanowire thin-film transistors (10(4) devices in a 25 mm(2) area) are fabricated and we effectively demonstrate their enhanced performance. Furthermore, CuO nanowire exhibits high and fast response to CO gas at 200 degrees C, whic...
متن کامل